The neat thing about the series 5000 is that it was built around new (at the time) Hitachi lateral power MOSFETs. Most power MOSFETs (VMOS, trenchFETs, HexFETs etc) use a vertical structure, where the current flows vertically.
This has the advantage of stunningly low Rds and hence high efficiency, but does nothing for linearity or capacitance. Lateral MOSFETs are a much simpler structure, where the gate oxide is formed on a flat substrate, and the current flows across the substrate. This results in well defined, controllable device parameters, good linearity, and relatively low gate capacitance. However, the Rds of lateral MOSFETs is nothing to write home about.
No comments:
Post a Comment